Technology & Innovation

  • 2020 Jiangsu Province Key R&D Plan

    Project name: Research on High Quality Gallium Nitride Epitaxial Growth on 6-inch Silicon Carbide for 5G Communication Applications

    Project time: 2020

    Project Status:Underway
  • 2018 Jiangsu Province Key R&D Plan

    Project name: Research and development of key technologies for the preparation and application of sapphire-based high-reliability GaN-HEMT devices

    Project time: 2018

    Solved problems, benefits and significance:

    Developed high-reliability sapphire-based enhanced GaN-HEMT devices that meet the needs of applications such as smart home appliances and new energy vehicles.

    Project Status:Underway
  • 2018 Jiangsu Province Key R&D Plan

    Project name: Development and application of key technologies for large-size, high-quality gallium oxide ultra-wide bandgap power semiconductor materials

    Project time: 2018

    Solved problems, benefits and significance:

    Key breakthroughs have been made in material epitaxy technology and large-scale manufacturing processes, and high-quality, large-size, low-cost Ga2O3 epitaxial wafers that meet the requirements of power electronic devices have been obtained, which is a development and development in the field of advanced power semiconductors and power electronic devices in China. Practicality provides technical support.

    Project Status:Underway
  • 2017 National Key R&D Program Strategic Advanced Electronic Materials Key Special Project

    Project name: Key Technology of New GaN-based Power Electronic Devices Topic Avalanche breakdown effect and new withstand voltage structure of GaN-based power devices

    Project time: 2017

    Solved problems, benefits and significance:

    The withstand voltage level of GaN-based devices has achieved a breakthrough, reaching the international advanced level, clarifying the stability of GaN-based devices, and finding ways to improve device stability; trying to apply GaN-based devices in power supplies to lay the foundation for popularization.

    Project Status:Finished
  • 2016 Jiangsu Province Key R&D Plan

    Project name: Research and development of common key technologies for high-performance enhanced Si-based GaN power switching devices

    Project time: 2016

    Solved problems, benefits and significance:

    Combining with the country’s development needs in energy conservation, emission reduction, and efficient use of energy, with the goal of achieving high-performance enhanced Si-based GaN power switching devices, the research and development of related common key technologies will be carried out to achieve related technological breakthroughs and Industrial development.

    Project Status:Finished
  • 2015 national project-863 Program.

    Project name: Key Technologies for Fabrication of GaN Power Electronic Devices on Sapphire Substrate

    Project time: 2015

    Solved problems, benefits and significance:

    In response to China’s major needs for GaN power electronic devices in energy conservation and emission reduction, modern information engineering, and modern national defense construction, research and development of GaN power electronic devices based on sapphire substrates, and develop new technologies for low-cost, highly reliable, and integrable GaN power electronic devices .

    Project Status:Finished