On August 17, co-sponsored by China Wide Bandgap Power Semiconductor and Application Industry Alliance (hereinafter referred to as "China Broadband") and Zhangjiagang Municipal People's Government, undertook by Zhangjiagang Economic Development Zone, High-tech Zone, Science and Technology Bureau, Jiangsu Nenghua Microelectronics The "Sino-foreign Compound Semiconductor Industry and Technology Development Exchange Conference" co-organized by Science and Technology Development Co., Ltd. was successfully held in Zhangjiagang, Jiangsu and was a complete success!
Director of the Integrated Circuit Division of the Electronic Information Department of the Ministry of Industry and Information Technology, Deputy Mayor Hu Jun of the People's Government of Zhangjiagang City, Professor Russell D. Dupuis, Academician of the American Academy of Engineering (Father of MOCVD), Secretary-General Xiao Xiangfeng of China Broadband, etc. Nearly 100 leaders, domestic and foreign industry experts, and entrepreneurs attended the meeting. Director Ren Aiguang and Deputy Mayor Hu Jun delivered speeches to congratulate the grand opening of the meeting.
During the conference, Academician Russell Dupuy gave a report on "Lighting the World: Metal Organic Chemical Vapor Deposition of III-V Compound Semiconductor Devices"; Professor Li Xiaohang from King Abdullah University of Science and Technology in Saudi Arabia gave a report on "Wide Band Gap Semiconductors" "Opportunities and Challenges of Ultraviolet Light-Emitting Devices"; Professor Junxia Shi from the University of Illinois made a report on "GaN Technology Development Review and Prospects"; Researcher Huang Yong from the Suzhou Institute of Nanotechnology, Chinese Academy of Sciences made "III-V Compound Semiconductor Materials, Devices and Applications" "The report of "Gallium Nitride Visible Laser and Its Application" was made by Liu Jianping, a researcher from the Suzhou Institute of Nanotechnology, Chinese Academy of Sciences.
The participants carefully listened to the reports of the above five experts and scholars, and focused on the development status of the gallium nitride semiconductor industry at home and abroad. The meeting will play a positive role in promoting technological synergy and the sound development of the industry.
Zhangjiagang City Government attaches great importance to the development of wide-bandgap semiconductors, cultivates them as an important industry, and launched the "Zhangjiagang City Compound Semiconductor Industry Development Plan". The municipal government, economic development zone, and high-tech zone have been actively cooperating with China Broadband since 2017. In addition to this meeting, they also co-hosted the "2017 China Wide Band Gap Power Semiconductor and Application Industry Forum Conference", "China Broadband The "final review meeting" of the development roadmap for band-gap power semiconductors was a complete success. In the future, China Broadband will continue to cooperate closely with Zhangjiagang City to jointly promote the sound development of the industry.
