The 69th IEEE International Electronic Devices Meeting (IEDM 2023) was held in San Francisco, USA from December 9th to 13th.

The International Conference on Electronic Devices (IEDM) began in 1955 and is a top conference in the field of integrated circuit devices. It enjoys a high academic status and extensive influence in the international semiconductor technology community and is known as the "Olympic Games of Devices".

IEDM has a huge influence and is the main forum for global reporting on the latest technology, design, manufacturing, physics, and modeling in the semiconductor and electronic device field. It is also an important platform for universities, research and development institutions, and industry leaders to report their technological breakthroughs. Every year, internationally renowned semiconductor companies such as Intel, Samsung, TSMC, and IBM use this conference to release their latest research findings.

At the 2023 IEDM conference, Corenergy presented a paper titled "1200V E-mode GaN Monolithic Integration Platform on Sapphire with Ultra thin Buffer Technology", which includes high-voltage enhanced GaN devices, low-voltage enhanced GaN devices, diodes, resistors, and capacitors. The breakdown voltage of high-voltage devices reached 2300V, At a voltage of 1200V, the off state leakage current is only 100pA/mm, and the breakdown voltage of the shallow slot isolation structure reaches 3000V.

Based on long-term technical cooperation between Corenergy and Southeast University, we have jointly developed ultra-thin buffer layer (UTB) epitaxial technology. The world has reported for the first time the 1200V GaN high and low voltage compatible fabrication process. The 1200V GaN half bridge integrated chip developed based on this technology has achieved crosstalk free operation under 800V/1MHz/175 ℃ conditions.

1200V Enhanced Gallium Nitride Monolithic Integrated Platform

1200V gallium nitride single-chip integrated chip physical object

This achievement reflects the advantages of GaN devices in the 1200V application field, and will lead the promotion of the widespread application of GaN devices in the 1200V application field.