2018 Jiangsu Province Key R&D Plan

Project name: Research and development of key technologies for the preparation and application of sapphire-based high-reliability GaN-HEMT devices

Project time: 2018

Solved problems, benefits and significance:

Developed high-reliability sapphire-based enhanced GaN-HEMT devices that meet the needs of applications such as smart home appliances and new energy vehicles.

2018 Jiangsu Province Key R&D Plan

Project name: Development and application of key technologies for large-size, high-quality gallium oxide ultra-wide bandgap power semiconductor materials

Project time: 2018

Solved problems, benefits and significance:

Key breakthroughs have been made in material epitaxy technology and large-scale manufacturing processes, and high-quality, large-size, low-cost Ga2O3 epitaxial wafers that meet the requirements of power electronic devices have been obtained, which is a development and development in the field of advanced power semiconductors and power electronic devices in China. Practicality provides technical support.

2017 National Key R&D Program Strategic Advanced Electronic Materials Key Special Project

Project name: Key Technology of New GaN-based Power Electronic Devices Topic Avalanche breakdown effect and new withstand voltage structure of GaN-based power devices

Project time: 2017

Solved problems, benefits and significance:

The withstand voltage level of GaN-based devices has achieved a breakthrough, reaching the international advanced level, clarifying the stability of GaN-based devices, and finding ways to improve device stability; trying to apply GaN-based devices in power supplies to lay the foundation for popularization.

2016 Jiangsu Province Key R&D Plan

Project name: Research and development of common key technologies for high-performance enhanced Si-based GaN power switching devices

Project time: 2016

Solved problems, benefits and significance:

Combining with the country’s development needs in energy conservation, emission reduction, and efficient use of energy, with the goal of achieving high-performance enhanced Si-based GaN power switching devices, the research and development of related common key technologies will be carried out to achieve related technological breakthroughs and Industrial development.

2015 National Development and Reform Commission Special Project

Project name: Industrialization of high-power GaN electronic devices and materials

Project time: 2015

Solved problems, benefits and significance:

In response to the foreign monopoly on my country's GaN semiconductor materials, it creates profits and taxes and increases employment.

2013 Provincial International Science and Technology Cooperation Project

Project name: Application Research of New MO Source to Improve the Performance of GaN High Power Devices

Project time: 2013