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8-inch silicon-based epitaxial wafer

6-inch silicon-based epitaxial wafer

silicon carbide-based epitaxial wafer

sapphire-based epitaxial wafer

Epitaxial Products

Specification	Models	Pictures
D-HEMT/650V/Si-150mm-1000μm	150 mm D-HEMT on Si
E-HEMT/650V/Si-150mm-1000μm	150 mm E-HEMT on Si
D-HEMT/200V/Si-150mm-1000μm	150 mm D-HEMT on Si
E-HEMT/200V/Si-150mm-1000μm	150 mm E-HEMT on Si
RF-HEMT/200V/Si-150mm-1000μm	150 mm rf-HEMT on Si
D-HEMT/650V/Si-200mm-975μm	200 mm D-HEMT on Si
E-HEMT/650V/Si-200mm-975μm	200 mm E-HEMT on Si
D-HEMT/200V/Si-200mm-725μm	200 mm D-HEMT on Si
E-HEMT/200V/Si-200mm-725μm	200 mm E-HEMT on Si
RF-HEMT/200V/SiC-50mm-360μm	50 mm rf-HEMT on SiC
RF-HEMT/200V/SiC-100mm-500μm	100 mm rf-HEMT on SiC
RF-HEMT/200V/SiC-150mm-500μm	150 mm rf-HEMT on SiC
D-HEMT/Sapphire-50mm-430μm	D-HEMT on sapphire
D-HEMT/Sapphire-100mm-650μm	D-HEMT on sapphire
D-HEMT/Sapphire-150mm-1000μm	D-HEMT on sapphire
E-HEMT/Sapphire-50mm-430μm	E-HEMT on sapphire
E-HEMT/Sapphire-100mm-650μm	E-HEMT on sapphire
E-HEMT/Sapphire-150mm-1000μm	E-HEMT on sapphire
SBD/650V/sapphire-50mm-430μm	SBD on sapphire
SBD/650V/sapphire-100mm-650μm	SBD on sapphire
SBD/650V/sapphire-150mm-1200μm	SBD on sapphire

DFN5*6

DFN8*8

TO220

TO220F

TO252

TO247-3L

Power Component

Product	Withstand voltage	Conduction resistance	Threshold voltage	Model	Package form	Pictures
CE65E300DNYI	650V	300mΩ	2.5V	增强型单管	DFN 5*6
CE65E160DNHI	650V	160mΩ	2.5V	增强型单管	DFN 8*8
CE65E160DNYI	650V	160mΩ	2.5V	增强型单管	DFN 5*6
CE65H110TOAI	650V	110mΩ	3.9V	耗尽型级联	TO220
CE65H110DNDI	650V	110mΩ	3.9V	耗尽型级联	DFN8*8
CE65H160TOAIF	650V	160mΩ	3.9V	耗尽型级联	TO220F
CE65H160DNGI	650V	160mΩ	1.7V	耗尽型级联	DFN 8*8
CE65H270TOBI	650V	270mΩ	3.9V	耗尽型级联	TO252
CE65H270TOEI	650V	270mΩ	3.9V	耗尽型级联	TO252
CE65H270DNGI	650V	270mΩ	1.7V	耗尽型级联	DFN 8*8
CE65H270TOAIF	650V	270mΩ	3.9V	耗尽型级联	TO220F
CE65H600TOEI	650V	600mΩ	3.9V	耗尽型级联	TO252
CE65H600TOAIF	650V	600mΩ	3.9V	耗尽型级联	TO220F
CE65H900TOEI	650V	900mΩ	3.9V	耗尽型级联	TO252
CE65H160DNCI	650V	160mΩ	3.9V	耗尽型级联	DFN5*6
CE65H270DNCI	650V	270mΩ	3.9V	耗尽型级联	DFN5*6
CE65H600DNCI	650V	600mΩ	3.9V	耗尽型级联	DFN5*6
CE65H900DNCI	650V	900mΩ	3.9V	耗尽型级联	DFN5*6
CE65H080TOCI	650V	80mΩ	3.9V	耗尽型级联	TO247-3

Photolithography

Etch

TSV

PECVD

Foundry Process Platform

Product Category

Processing Procedure

01 photoetching（50mm-200mm）

02 Metal sputtering（Ti、Al、TiN、Cu）
Metal evaporation（Ti、Al、Ni、Pt、Mo、Ta、Ag、Co、Cr,etc.）

03 Dry etching（GaN、Si、SiC、SiO2、Si3N4、AL、TiN、Ni、Cr、Pt, etc.）

04 Wet etching and cleaning

05 Thin film PECVD deposited SiO2, Si3N4, ALD deposited Al2O3, AlN and Si3N4, etc

06 Ion implantation N, BF2, Ar

07 TSV process

08 Grinding, scribing

09 Wafer, device testing

10 Laser slotting

11 Pan cleaning

Contact Us

Address：

No.B12 Building,No.2 Fuxin Road Zhangjiagang,Jiangsu Province, China, 215600

HotLine：

+86 0512-88830088-8001

Email：

ces@corenergy.com