Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

To cite this article: Yuanyang Xia et al 2020 Mater. Res. Express 7 065902

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Investigations of the gate-instability characteristics in Schottky/ohmic type p-Gan gate normally-off AIGan/Gan HEMTs

Changkun Zeng,Weizong Xu,Yuanyang Xia,Danfeng Pan,Yiwang Wang,Qiang Wang,Youhua Zhu,Fangfang Ren,Dong ZHou,Jiandong Ye,Dunjun Chen,Rong Zhang,Youdou Zheng,and Hai Lu

2019 The Japan Society of Applied Physics

https://doi.org/10.7567/1882-0786/ab52cc

Effects of the cap layer on the properties of ALN barrier HEMT grown on 6-inch Si(111) substrate

Yuanyang Xia,Youhua Zhu,Chunhua Liu,Hongyuan Wei,Tingting Zhang,YeehengLee,TinggangZhu,Meiyu wang,Li Yi and MeiGe

IOP Publishing   Mater.Res.Express 7(2020)065902

Yuanyang Xia1 , Youhua Zhu1,2,3 , Chunhua Liu1 , Hongyuan Wei1 , Tingting Zhang1 , Yeeheng Lee1 , Tinggang Zhu1 , Meiyu wang2 , Li Yi2 and Mei Ge2

1 CorEnergy Semiconductor Co., LTD, Zhangjiagang 215600, People’s Republic of China 

2 School of Information Science and Technology, Nantong University, Nantong 226019, People’s Republic of China 

3 Author to whom any correspondence should be addressed.

1.Xia_2020_Mater._Res._Express_7_065902.pdf